Extraction of microwave FET noise wave temperatures by using a novel neural approach
ISSN: 0332-1649
Article publication date: 4 January 2016
Abstract
Purpose
The purpose of this paper is the development of an efficient approach for extraction of the microwave FET noise wave temperatures.
Design/methodology/approach
The proposed approach is based on an artificial neural network (ANN) trained to determine the noise wave temperatures from the given measured transistor noise parameters.
Findings
The presented approach enables not only efficient, but also an accurate direct extraction of the noise wave temperatures. This is confirmed by the validation of the proposed approach that is done by comparison of the transistor noise parameters obtained using the extracted noise wave temperatures with the measured noise parameters.
Originality/value
Application of ANN is a novel approach to extract the noise wave temperatures, which provides more efficient microwave FET noise wave modeling.
Keywords
Acknowledgements
The work was supported by the TR-32052 project of the Serbian Ministry of Education, Science and Technological Development. The authors would like to thank Professor Alina Caddemi, University of Messina, Italy, for providing the measured data.
Citation
Ðorđević, V., Marinković, Z., Marković, V. and Pronić-Rančić, O. (2016), "Extraction of microwave FET noise wave temperatures by using a novel neural approach", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 35 No. 1, pp. 339-349. https://doi.org/10.1108/COMPEL-07-2015-0254
Publisher
:Emerald Group Publishing Limited
Copyright © 2016, Emerald Group Publishing Limited