Effect of Si3N4 nanowires doping on microstructure and properties of Sn58Bi solder for Cu bonding
Soldering & Surface Mount Technology
ISSN: 0954-0911
Article publication date: 22 September 2023
Issue publication date: 10 January 2024
Abstract
Purpose
The purpose of this study is to delve into the mechanism of Si3N4 nanowires (NWs) in Sn-based solder, thereby furnishing a theoretical foundation for the expeditious design and practical implementation of innovative lead-free solder materials in the electronic packaging industry.
Design/methodology/approach
This study investigates the effect of adding Si3N4 NWs to Sn58Bi solder in various mass fractions (0, 0.1, 0.2, 0.4, 0.6 and 0.8 Wt.%) for modifying the solder and joining the Cu substrate. Meanwhile, the melting characteristics and wettability of solder, as well as the microstructure, interfacial intermetallic compound (IMC) and mechanical properties of joint were evaluated.
Findings
The crystal plane spacing and lattice constant of Sn and Bi phase increase slightly. A minor variation in the Sn58Bi solder melting point was caused, while it does not impact its functionality. An appropriate Si3N4 NWs content (0.2∼0.4 Wt.%) significantly improves its wettability, and modifies the microstructure and interfacial IMC layer. The shear strength increases by up to 10.74% when adding 0.4 Wt.% Si3N4 NWs, and the failure mode observed is brittle fracture mainly. However, excessive Si3N4 will cause aggregation at the junction between the solder matrix and IMC layer, this will be detrimental to the joint.
Originality/value
The Si3N4 NWs were first used for the modification of lead-free solder materials. The relative properties of composite solder and joints were evaluated from different aspects, and the optimal ratio was obtained.
Keywords
Acknowledgements
Since acceptance of this article, the following authors have updated their affiliations: Chen Chen and Xiao Lu are at the School of Mechanical and Electrical Engineering, Jiangsu Normal University, Xuzhou, China.
Thanks to corresponding author “Liang Zhang” for his strong support of this study, to “Xi Huang” and “Xiao Lu” for their help in the content of the experiment, and to the financial help provided by the “High Level Talent Research Initiation Project of Xiamen University of Technology (YKJ22054R), Fujian Provincial ‘Minjiang Scholar’ Distinguished Professor Talent Plan Project, and the Natural Science Foundation of Jiangsu Province (BK20211351)”.
Declaration of competing interest: The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
Citation
Chen, C., Zhang, L., Huang, X. and Lu, X. (2024), "Effect of Si3N4 nanowires doping on microstructure and properties of Sn58Bi solder for Cu bonding", Soldering & Surface Mount Technology, Vol. 36 No. 1, pp. 8-19. https://doi.org/10.1108/SSMT-07-2023-0037
Publisher
:Emerald Publishing Limited
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