Radiation hardened inverting and non-inverting MOSFET drivers

Citation

(2000), "Radiation hardened inverting and non-inverting MOSFET drivers", Aircraft Engineering and Aerospace Technology, Vol. 72 No. 3. https://doi.org/10.1108/aeat.2000.12772cad.006

Radiation hardened inverting and non-inverting MOSFET drivers

Keywords Intersil, Radiation, Satellites

Intersil Corporation announces its new radiation hardened (Rad Hard) high-speed MOSFET drivers designed for high reliability in aerospace, satellite and other systems where radiation can cause damage to sensitive electronics systems. Available in dual, monolithic formats for both inverting and non-inverting operation, the devices convert transistor-transistor logic (TTL) level signals into high current outputs at levels up to 18 volts (V). The devices represent Rad Hard versions of standard 4423RH and 4424RH MOSFET drivers. The devices have been designed to provide high reliability performance in harsh radiation environments.

The HS-4424RH/BRH and HS-4423RH/BRH represent non-inverting and inverting drivers respectively. All devices are said to be tested and guaranteed to provide the full performance of 4424RH and 4423RH MOSFET drivers even at high 300K Rad radiation levels. Intersil's dielectrically isolated Rad Hard Silicon Gate (RSG) BICMOS process reportedly provides full protection from single event latch-up. The Space and Defence markets benefit from the robust radiation testing conducted by Intersil eliminating the need for additional upscreening and radiation testing.

The devices operate from a single 12V to 18V power supply with low power consumption, 40 milliwatts (mW) typical. With a maximum 75 nanosecond (ns) rise and fall time with a 4,300 power factor (pF) load, the HS-442XRH/BRH devices exceed the requirements for most standard Rad Hard MOSFETs deployed in the space industry and allow for quick control of high gate capacitance power MOSFETs.

Peak output currents are greater than two amps (A) typical. The high current outputs minimise power losses in MOSFETs by rapidly charging and discharging the gate capacitance. Both the HS-4423RH and HS-4424RH feature a low voltage lockout at less than 10V, while the HS-4423BRH and HS-4424BRH feature low voltage lockout at less than 7.5V. The low voltage lockout circuit is incorporated in the output stage and puts outputs into a three-state mode when voltage drops below these levels.

The HS-442XRH/BRH devices are immediately available in a 16-lead flatpack package and are manufactured to DSCC SMD 5962F99511.

Details available from: Intersil Literature Service. Tel: +44 (0) 1344350250; Fax: +44 (0) 1344 488045; E-mail: Intersilinfo@mktpoint.com