Keywords
Citation
(2003), "Air Products and Penn State University researching effects of gas source purity", Microelectronics International, Vol. 20 No. 1. https://doi.org/10.1108/mi.2003.21820aab.007
Publisher
:Emerald Group Publishing Limited
Copyright © 2003, MCB UP Limited
Air Products and Penn State University researching effects of gas source purity
Air Products and Penn State University researching effects of gas source purity
Keywords: Gas, Pennsylvania State University
Air Products and The Pennsylvania State University have announced that they will continue cooperative research efforts to understand the effects of gas source purity on group III-nitride based thin films and device structures.
This program has been evaluating typical residual and other metallic impurity levels in layers grown by metalorganic vapor phase epitaxy (MOVPE) using high purity ammonia sources, and the impact of these impurities on the structural, electrical and optical properties of the compound semiconductor materials.
The objective of the program is to conclusively identify and reduce sources of oxygen and other undesired impurities within the MOVPE environment, including the development of high-purity ammonia sources.
Group III-nitrides have rapidly developed into an important materials system for a wide variety of device applications, ranging from lasers and high brightness LEDs, to high power microwave transistors. MOVPE is the primary technique currently in use for the commercial fabrication of AlGaInN.
The Air Products program with Penn State is an outgrowth of relationships built by Solkatronic Chemicals' ongoing efforts to improve grades of ammonia for use in ultra-sensitive GaN processes for the global compound semiconductor industry.