A frequency tunable half-wave resonator using a MEMS variable capacitor

doi:10.1108/13565360310455481

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Microelectronics International

ISSN: 1356-5362

Online from: 1982

Subject Area: Electrical & Electronic Engineering

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A frequency tunable half-wave resonator using a MEMS variable capacitor

Document Information:
Title:	A frequency tunable half-wave resonator using a MEMS variable capacitor
Author(s):	Patrick Bell, (Department of Electrical Engineering, University of Colorado Boulder, CO, USA), Nils Hoivik, (Department of Electrical Engineering, University of Colorado Boulder, CO, USA), Victor Bright, (Department of Electrical Engineering, University of Colorado Boulder, CO, USA), Zoya Popovic, (Department of Electrical Engineering, University of Colorado Boulder, CO, USA)
Citation:	Patrick Bell, Nils Hoivik, Victor Bright, Zoya Popovic, (2003) "A frequency tunable half-wave resonator using a MEMS variable capacitor", Microelectronics International, Vol. 20 Iss: 1, pp.21 - 25
Keywords:	Flip-chip, Microelectronics
Article type:	Technical paper
DOI:	10.1108/13565360310455481 (Permanent URL)
Publisher:	MCB UP Ltd
Abstract:	A frequency tunable half-wave resonator at 3?GHz is presented with a microelectromechanical systems (MEMS) variable capacitor as the tuning element. The capacitor is fabricated using the multi-user MEMS process (MUMPs) technology provided by JDS/Cronos, and transferred to an alumina substrate by an in-house developed flip-chip process. This capacitor is electrostatically actuated. The resulting C-V response is linear with a slope of 0.05?pF/V for a wide range of actuation voltages. The MEMS device has a capacitance ratio of 3:1 for 0-70?V bias, with a Q-factor of 140 measured at 1?GHz. A half-wave tunable microstrip resonator with bias lines is designed to include this MEMS device, which exhibits linear tuning over 180?MHz (6 percent) centered around 3?GHz with a constant 3?dB bandwidth of 160?MHz over the entire tuning range. The power consumption of the MEMS device was measured to be negligible.