Online from: 1982
Subject Area: Electrical & Electronic Engineering
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|Title:||A new time-dependent mobility degradation model for MOS transistors|
|Author(s):||Yasin Özcelep, (Electrical and Electronics Department, Istanbul University, Istanbul, Turkey), Ayten Kuntman, (Electrical and Electronics Department, Istanbul University, Istanbul, Turkey)|
|Citation:||Yasin Özcelep, Ayten Kuntman, (2012) "A new time-dependent mobility degradation model for MOS transistors", Microelectronics International, Vol. 29 Iss: 3, pp.141 - 144|
|Keywords:||Electrical stress, Field-effect transistors, Metal oxide semiconductor field effect transistor, Mobility degradation modeling, Semiconductors, Transistors|
|Article type:||Research paper|
|DOI:||10.1108/13565361211252890 (Permanent URL)|
|Publisher:||Emerald Group Publishing Limited|
Purpose – The purpose of this paper is to propose a time-dependent mobility degradation model which is independent from the process or operating conditions.
Design/methodology/approach – In total, four transistors under test are electrically stressed using constant positive electrical stress voltage technique with the gate bias of V
Findings – The experimental results show that the output current and the threshold voltage of the transistor are increased after the stress. Mobility and channel length are decreased. The changes in the transistor parameters were associated to interface state Si/SiO
Originality/value – This is an original research paper and enables the mobility degradation to be predicted independently from effects of process or operational changes such as oxide thickness, substrate doping, and applied voltages on transistor.
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