Developments in advanced silicon etching techniques by STS Systems
Robert Bogue
(Robert Bogue is an Associate Editor for Sensor Review)
616
Abstract
Describes a novel dry etching technique, developed by STS Systems plc, based on a high‐density, inductively coupled plasma (ICP) technology, which enables the fabrication of advanced silicon microsensors and a wide range of other MEMS devices. Describes the process and illustrates various applications.
Keywords
Citation
Bogue, R. (2002), "Developments in advanced silicon etching techniques by STS Systems", Sensor Review, Vol. 22 No. 1, pp. 41-45. https://doi.org/10.1108/02602280210416132
Publisher
:MCB UP Ltd
Copyright © 2002, MCB UP Limited