A faster power MOSFET device with electrical stress treatment

Abstract

Purpose

The aim of this paper is to provide some specific information on the effects of DC voltage stress on the current, rise time (Tr) and fall time (Tf), at switching between on and off state of power n‐MOSFET devices.

Design/methodology/approach

A constant positive electrical stress voltage technique is used to study the devices in this work by giving the gate a positively bias with respect to source and a short circuit of the drain with the grounded source. Voltage stress is gradually increased by automatic 1 V step until it reaches the max tolerated value by the gate dielectric (70 V for device studied in this paper). Response of the device for electrical stress was measured for different doses (stress time).

Findings

The experimental results show that the rise time increases the beginning of stress dose and then it almost stabilises with time, while fall time decreases at first and then starts to increase for higher stress time. The modification of the device switching time parameters were associated to positive oxide charge and interface state Si/SiO₂ effects.

Originality/value

This paper offers new information concerning a very important field in microelectronic devices where the switching speed of the components becomes a major requirement. The technique used to improve the device speed has a very low cost and a simple feasibility.

Citation

Salame, C., Habchi, R., Tazibt, W., Khoury, A. and Mialhe, P. (2005), "A faster power MOSFET device with electrical stress treatment", Microelectronics International, Vol. 22 No. 2, pp. 35-37. https://doi.org/10.1108/13565360510592207