High‐quality In_0.47Ga_0.53N/GaN heterostructure on Si(111) and its application to MSM detector

Abstract

Purpose

This paper aims to report on the use of radio frequency nitrogen plasma‐assisted molecular beam epitaxy (RF‐MBE) to grow high‐quality n‐type In_0.47Ga0.53N/GaN on Si(111) substrate using AlN as a buffer layer.

Design/methodology/approach

Structural analyses of the InGaN films were performed by using X‐ray diffraction, atomic force microscopy, and Hall measurement. Metal‐semiconductor‐metal (MSM) photodiode was fabricated on the In_0.47Ga0.53N/Si(111) films. Electrical analysis of the MSM photodiodes was carried out by using current‐voltage (I‐V) measurements. Ideality factors and Schottky barrier heights for Ni/In_0.47Ga0.53N, was deduced to be 1.01 and 0.60 eV, respectively.

Findings

The In_0.47Ga0.53N MSM photodiode shows a sharp cut‐off wavelength at 840 nm. A maximum responsivity of 0.28 A/W was achieved at 839 nm. The detector shows a little decrease in responsivity from 840 to 200 nm. The responsivity of the MSM drops by nearly two orders of magnitude across the cut‐off wavelength.

Originality/value

Focuses on III‐nitride semiconductors, which are of interest for applications in high temperature/power electronic devices.

Citation

Chuah, L.S., Hassan, Z. and Abu Hassan, H. (2008), "High‐quality In_0.47Ga_0.53N/GaN heterostructure on Si(111) and its application to MSM detector", Microelectronics International, Vol. 25 No. 2, pp. 3-8. https://doi.org/10.1108/13565360810875949