Electrochemical and biological response of titanium (cp-Ti) after silicon ion implantation

Abstract

Purpose

This study/paper aims to the authors applied low “Si” ions dose over cp-Ti-2, and the potent dose level was optimized for adequate corrosion resistance and effective proliferation of stem cells.

Design/methodology/approach

The cp-Ti surface was modified by silicon (Si) ions beam at 0.5 MeV in a Pelletron accelerator. Three different ion doses were applied to the polished samples, and the surface was characterized by XRD and AFM analysis.

Findings

At moderate “Si” ion dose (6.54 × 10¹² ions-cm⁻²), the potential shifted to a noble value. The small “i_corr” (1.22 µA.cm⁻²) and relatively large charge transfer resistance (43.548 kΩ-cm²) in the ringer‘s lactate solution was confirmed through Potentiodynamic polarization and impedance spectroscopy analysis. Compared to cp-Ti and other doses, this dose level also provided the effective proliferation of mesenchymal stem cells.

Originality/value

The dosage levels used were different to previous work and provided the effective proliferation of mesenchymal stem cells.

Citation

Deen, K.M., Farooq, A., Rizwan, M., Ahmad, A. and Haider, W. (2020), "Electrochemical and biological response of titanium (cp-Ti) after silicon ion implantation", Anti-Corrosion Methods and Materials, Vol. 67 No. 1, pp. 1-6. https://doi.org/10.1108/ACMM-03-2017-1771