Study on electronic transport performance of Ag-ZnO film by photoassisted conductive atomic force microscopy

Abstract

Purpose

The purpose of this paper is to study the electronic transport performance of Ag-ZnO film under dark and UV light conditions.

Design/methodology/approach

Ag-doped ZnO thin films were prepared on fluorine thin oxide (FTO) substrates by sol-gel method. The crystal structure of ZnO and Ag-ZnO powders was tested by X-ray diffraction with Cu Kα radiation. The absorption spectra of ZnO and Ag-ZnO films were recorded by a UV–visible spectrophotometer. The micro electrical transport performance of Ag-ZnO thin films in dark and light state was investigated by photoassisted conductive atomic force microscope (PC-AFM).

Findings

The results show that the dark reverse current of Ag-ZnO films does not increase, but the reverse current increases significantly under illumination, indicating that the response of Ag-ZnO films to light is greatly improved, owing to the formation of Ohmic contact.

Originality/value

To the best of the author’s knowledge, the micro electrical transport performance of Ag-ZnO thin films in dark and light state was firstly investigated by PC-AFM.

Citation

Zhang, Y. (2024), "Study on electronic transport performance of Ag-ZnO film by photoassisted conductive atomic force microscopy", Microelectronics International, Vol. 41 No. 2, pp. 103-108. https://doi.org/10.1108/MI-02-2023-0017