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Experimental study on the fracture behavior variation of the Au stud bump bonding with different high temperature storage times

Xiangou Zhang (Microsystem and Terahertz Research Center, Institute of Electronic Engineering, China Academy of Engineering Physics, MTRC, Chengdu, China)
Yuexing Wang (Microsystem and Terahertz Research Center, Institute of Electronic Engineering, China Academy of Engineering Physics, MTRC, Chengdu, China)
Xiangyu Sun (University of Electronic Science and Technology of China, Chengdu, China)
Zejia Deng (Microsystem and Terahertz Research Center, Institute of Electronic Engineering, China Academy of Engineering Physics, MTRC, Chengdu, China)
Yingdong Pu (Microsystem and Terahertz Research Center, Institute of Electronic Engineering, China Academy of Engineering Physics, MTRC, Chengdu, China)
Ping Zhang (Department of Microsystem Division, Sichuan Aerospace Liaoyuan Science and Technology Co., Ltd, Chengdu, China)
Zhiyong Huang (School of Aeronautics and Astronautics, Sichuan University, Sichuan University, Chengdu, China, and)
Quanfeng Zhou (Microsystem and Terahertz Research Center, Institute of Electronic Engineering, China Academy of Engineering Physics, MTRC, Chengdu, China)

Microelectronics International

ISSN: 1356-5362

Article publication date: 17 April 2023

Issue publication date: 20 February 2024

57

Abstract

Purpose

Au stud bump bonding technology is an effective means to realize heterogeneous integration of commercial chips in the 2.5D electronic packaging. The purpose of this paper is to study the long-term reliability of the Au stud bump treated by four different high temperature storage times (200°C for 0, 100, 200 and 300 h).

Design/methodology/approach

The bonding strength and the fracture behavior are investigated by chip shear test. The experiment is further studied by microstructural characterization approaches such as scanning electron microscope, energy dispersive spectrometer and so on.

Findings

It is recognized that there were mainly three typical fracture models during the chip shear test among all the Au stud bump samples treated by high temperature storage. For solder bump before aging, the fracture occurred at the interface between the Cu pad and the Au stud bump. As the aging time increased, the fracture mainly occurred inside the Au stud bump at 200°C for 100 and 200 h. When aging time increased to 300 h, it is found that the fracture transferred to the interface between the Au stud bump and the Al Pad.

Originality/value

In addition, the bonding strength also changed with the high temperature storage time increasing. The bonding strength does not change linearly with the high temperature storage time increasing but decreases first and then increases. The investigation shows that the formation of the intermetallic compounds because of the reaction between the Au and Al atoms plays a key role on the bonding strength and fracture behavior variation.

Keywords

Citation

Zhang, X., Wang, Y., Sun, X., Deng, Z., Pu, Y., Zhang, P., Huang, Z. and Zhou, Q. (2024), "Experimental study on the fracture behavior variation of the Au stud bump bonding with different high temperature storage times", Microelectronics International, Vol. 41 No. 2, pp. 82-88. https://doi.org/10.1108/MI-12-2022-0203

Publisher

:

Emerald Publishing Limited

Copyright © 2023, Emerald Publishing Limited

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