On variation of charge carrier mobility under influence of mismatch-induced stress in a heterostructure
Multidiscipline Modeling in Materials and Structures
ISSN: 1573-6105
Article publication date: 15 December 2017
Issue publication date: 21 February 2018
Abstract
Purpose
The purpose of this paper is to analyze the manufacturing of diffusion-junction heterorectifier with account relaxation of mismatch-induced stress. On the basis of the analysis, the authors formulate recommendations to increase sharpness of the p-n-heterojunction, homogeneity of concentration of dopant in the junction and charge carrier mobility.
Design/methodology/approach
The authors formulate recommendations to increase sharpness of p-n-heterojunction, homogeneity of concentration of dopant in the junction and charge carrier mobility. To formulate the recommendations, the authors analyzed the manufacturing of the junction. The authors introduce an analytical approach to analyze the manufacturing.
Findings
The authors find a possibility to increase sharpness of p-n-heterojunction, homogeneity of concentration of dopant in the junction and charge carrier mobility.
Originality/value
The results are original.
Keywords
Citation
Pankratov, E.L. and Bulaeva, E.A. (2018), "On variation of charge carrier mobility under influence of mismatch-induced stress in a heterostructure", Multidiscipline Modeling in Materials and Structures, Vol. 14 No. 1, pp. 77-90. https://doi.org/10.1108/MMMS-04-2017-0016
Publisher
:Emerald Publishing Limited
Copyright © 2018, Emerald Publishing Limited