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A numerical study on thermal deformation of through silicon via with electroplating defect

Chongbin Hou (School of Microelectronics, Shanghai University, Shanghai, China) (Shanghai Key Laboratory of Intelligent Connected Vehicle Interaction Chip and System, Shanghai University, Shanghai, China)
Yang Qiu (School of Microelectronics, Shanghai University, Shanghai, China) (Shanghai Key Laboratory of Intelligent Connected Vehicle Interaction Chip and System, Shanghai University, Shanghai, China)
Xingyan Zhao (School of Microelectronics, Shanghai University, Shanghai, China) (Shanghai Key Laboratory of Intelligent Connected Vehicle Interaction Chip and System, Shanghai University, Shanghai, China)
Shaonan Zheng (School of Microelectronics, Shanghai University, Shanghai, China) (Shanghai Key Laboratory of Intelligent Connected Vehicle Interaction Chip and System, Shanghai University, Shanghai, China)
Yuan Dong (School of Microelectronics, Shanghai University, Shanghai, China) (Shanghai Key Laboratory of Intelligent Connected Vehicle Interaction Chip and System, Shanghai University, Shanghai, China)
Qize Zhong (School of Microelectronics, Shanghai University, Shanghai, China) (Shanghai Key Laboratory of Intelligent Connected Vehicle Interaction Chip and System, Shanghai University, Shanghai, China)
Ting Hu (School of Microelectronics, Shanghai University, Shanghai, China) (Shanghai Key Laboratory of Intelligent Connected Vehicle Interaction Chip and System, Shanghai University, Shanghai, China)

Multidiscipline Modeling in Materials and Structures

ISSN: 1573-6105

Article publication date: 2 January 2024

Issue publication date: 29 January 2024

104

Abstract

Purpose

By investigating the thermal-mechanical interaction between the through silicon via (TSV) and the Cu pad, this study aimed to determine the effect of electroplating defects on the upper surface protrusion and internal stress distribution of the TSV at various temperatures and to provide guidelines for the positioning of TSVs and the optimization of the electroplating process.

Design/methodology/approach

A simplified model that consisted of a TSV (100 µm in diameter and 300 µm in height), a covering Cu pad (2 µm thick) and an internal drop-like electroplating defect (which had various dimensions and locations) was developed. The surface overall deformation and stress distribution of these models under various thermal conditions were analyzed and compared.

Findings

The Cu pad could barely suppress the upper surface protrusion of the TSV if the temperature was below 250 ?. Interfacial delamination started at the collar of the TSV at about 250 ? and became increasingly pronounced at higher temperatures. The electroplating defect constantly experienced the highest level of strain and stress during the temperature increase, despite its geometry or location. But as its radius expanded or its distance to the upper surface increased, the overall deformation of the upper surface and the stress concentration at the collar of the TSV showed a downward trend.

Originality/value

Previous studies have not examined the influence of the electroplating void on the thermal behavior of the TSV. However, with the proposed methodology, the strain and stress distribution of the TSV under different conditions in terms of temperature, dimension and location of the electroplating void were thoroughly investigated, which might be beneficial to the positioning of TSVs and the optimization of the electroplating process.

Keywords

Acknowledgements

This work was funded by the National Natural Science Foundation of China (No: 62205193 and No: 62204149).

Citation

Hou, C., Qiu, Y., Zhao, X., Zheng, S., Dong, Y., Zhong, Q. and Hu, T. (2024), "A numerical study on thermal deformation of through silicon via with electroplating defect", Multidiscipline Modeling in Materials and Structures, Vol. 20 No. 1, pp. 115-125. https://doi.org/10.1108/MMMS-04-2023-0141

Publisher

:

Emerald Publishing Limited

Copyright © 2023, Emerald Publishing Limited

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