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A double-end-beam based infrared device fabricated using CMOS-MEMS process

Cheng Lei (Key Laboratory of Instrumentation Science and Dynamic Measurement, North University of China, Taiyuan, China and Smart Sensing R&D Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China)
Haiyang Mao (Smart Sensing R&D Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China)
Yudong Yang (Key Laboratory of Instrumentation Science and Dynamic Measurement, North University of China, Taiyuan, China and Smart Sensing R&D Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China)
Wen Ou (Smart Sensing R&D Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China)
Chenyang Xue (Key Laboratory of Instrumentation Science and Dynamic Measurement, North University of China, Taiyuan, China)
Zong Yao (Key Laboratory of Instrumentation Science and Dynamic Measurement, North University of China, Taiyuan, China)
Anjie Ming (Smart Sensing R&D Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China)
Weibing Wang (Smart Sensing R&D Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China)
Ling Wang (College of Mechanical and Electrical Engineering, Henan Agricultural University, Zhengzhou, China)
Jiandong Hu (College of Mechanical and Electrical Engineering, Henan Agricultural University, Zhengzhou, China)
Jijun Xiong (Key Laboratory of Instrumentation Science and Dynamic Measurement, North University of China, Taiyuan, China)

Sensor Review

ISSN: 0260-2288

Article publication date: 20 June 2016

159

Abstract

Purpose

Thermopile infrared (IR) detectors are one of the most important IR devices. Considering that the surface area of conventional four-end-beam (FEB)-based thermopile devices cannot be effectively used and the performance of this type of devices is relatively low, this paper aims to present a double-end-beam (DEB)-based thermopile device with high duty cycle and performance. The paper aims to discuss these issues.

Design/methodology/approach

Numerical analysis was conducted to show the advantages of the DEB-based thermopile devices.

Findings

Structural size of the DEB-based thermopiles may be further scaled down and maintain relatively higher responsivity and detectivity when compared with the FEB-based thermopiles. The authors characterized the thermoelectric properties of the device proposed in this paper, which achieves a responsivity of 1,151.14 V/W, a detectivity of 4.15 × 108 cm Hz1/2/W and a response time of 14.46 ms sensor based on DEB structure.

Orginality/value

The paper proposed a micro electro mechanical systems (MEMS) thermopile infrared sensor based on double-end-beam structure.

Keywords

Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos 61401458, 61335008, 61136006 and 51205373), Jiangsu Natural Science Foundation (Grant No. BK20131098) and Henan Province Collaborative Projects in Science and Technology (132106000073).

Citation

Lei, C., Mao, H., Yang, Y., Ou, W., Xue, C., Yao, Z., Ming, A., Wang, W., Wang, L., Hu, J. and Xiong, J. (2016), "A double-end-beam based infrared device fabricated using CMOS-MEMS process", Sensor Review, Vol. 36 No. 3, pp. 240-248. https://doi.org/10.1108/SR-02-2016-0038

Publisher

:

Emerald Group Publishing Limited

Copyright © 2016, Emerald Group Publishing Limited

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