Atotech B1.105

Circuit World

ISSN: 0305-6120

Article publication date: 1 March 2002

52

Citation

(2002), "Atotech B1.105", Circuit World, Vol. 28 No. 1. https://doi.org/10.1108/cw.2002.21728aad.007

Publisher

:

Emerald Group Publishing Limited

Copyright © 2002, MCB UP Limited


Atotech B1.105

Atotech B1.105

Atotech will be exhibiting Seleo CP – a next generation direct plating process based on a conductive polymer (see Plate 1).

Plate 1 UniplateSeleoCP

The Seleo CP layer shows unsurpassed conductivity for highest throwing power demands for high aspect ratio HDI production. The acidic adhesion promoter creates a fine, uniform manganese dioxide layer. This prevents the excessive formation of manganese dioxide, which may cause a reduction of conductivity in reducing post-polymerization steps. Furthermore, perfect hole wall adhesion of the Cu plated is obtained. In the polymerisation step the Seleo CP Polyconduct acid and the new monomer ensure excellent conductivity.

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