Citation
(2008), "Rohm and Haas announces agreement to develop implant solutions with IBM", Microelectronics International, Vol. 25 No. 3. https://doi.org/10.1108/mi.2008.21825cab.002
Publisher
:Emerald Group Publishing Limited
Copyright © 2008, Emerald Group Publishing Limited
Rohm and Haas announces agreement to develop implant solutions with IBM
Article Type: Industry news From: Microelectronics International, Volume 25, Issue 3
Rohm and Haas Electronic Materials have entered into a joint development agreement with IBM to create patterning materials and processes to enable implant at and below the 32 nm node.
The focus of the agreement is a joint collaboration to develop total implant solutions for advanced technology nodes. Ion implantation is a set of critical process steps to fabricate various types of transistors, which are the heart of semiconductor devices. The implant process selectively introduces electrical charges into extremely small areas that have been defined by preceding lithographic steps.
At 32 nm and below, implant lithography has become critical, but poses a major technology hurdle. As semiconductor designs continue to shrink, significant new challenges emerge in controlling implants used in the formation of transistors. It is anticipated that approximately 40 percent of photo levels in advanced logic designs will be implant.
Work on the joint collaboration will take place at IBM’s East Fishkill, Yorktown and Albany facilities and at Rohm and Haas Electronic Materials’ Advanced Technology Centre in Marlborough, MA, where completion of its new ultra-high NA 193 nm immersion cluster is expected by June 2008.