COMPEL - The international journal for computation and mathematics in electrical and electronic engineering: Volume 12 Issue 4
Table of contents
A COMPARISON OF ENERGY BALANCE AND SIMPLIFIED HYDRODYNAMIC MODELS FOR GaAs SIMULATION
Y. Apanovich, E. Lyumkis, B. Polsky, A. Shur, P. BlakeyThe use of energy balance and simplified hydrodynamic models for simulating GaAs devices is investigated. The simplified hydrodynamic model predicts velocity spikes that are not…
A COMPUTATIONALLY EFFICIENT VELOCITY‐SPACE TRANSPORT MODEL FOR DEVICE SIMULATION
Douglas E. DunnAn improved velocity‐space carrier transport model is presented, based on a direct solution of the Boltzmann Transport Equation. This model attempts to achieve the computational…
A STUDY OF THE INFLUENCE OF HYDRODYNAMIC MODEL EFFECTS ON CHARACTERISTICS OF SILICON BIPOLAR TRANSISTORS
A.D. Sadovnikov, D.J. RoulstonWith decreasing vertical dimensions of the bipolar transistor (BJT), non‐local effects of nonuniform electron temperature should have a significant effect on the BJT…
INVESTIGATIONS OF A NEW IMPACT IONIZATION MODEL FOR SUBMICRON DEVICES
Kamel Souissi, Henry H.K. TangWe discuss the device applications of a new impact ionization model. This model is based on a new formulation of the impact ionization rate for bulk semiconductors, derived from…
USING GREEN'S FUNCTIONS TO IMPROVE CONJUGATE GRADIENT CONVERGENCE FOR THE SEMI‐CONDUCTOR EQUATIONS
Stephen ChandlerThe aim of this paper is to present two independent ways in which a simple approximation to a Green's function for a differential equation can be used to improve the performance…
SPEEDING‐UP OF CONVERGENCE OF GUMMEL ITERATIONS FOR TRANSIENT SIMULATION
M.S. OBRECHT, M.I. ELMASRYEnhanced efficiency of the proposed modification of the Gummel decoupled method enables significant reduction of memory requirements in comparison to the conventionally used…
A COMPOUND EMITTER HETEROJUNCTION BIPOLAR TRANSISTOR
E.F. Chor, C.J. PengA compound emitter heterojunction bipolar transistor (HBT) structure that incorporates an additional heterojunction within the emitter for minority carrier confinement has been…
TWO‐DIMENSIONAL SIMULATIONS OF CUTOFF FREQUENCY CHARACTERISTICS FOR AlGaAs/GaAs HBTs WITH PLANAR STRUCTURES
K. Horio, A. NakataniCutoff frequency ƒT characteristics for AlGaAs/GaAs HBTs with planar structures are studied, by two‐dimensional simulation, with an emphasis placed on their dependences on the…
LATERAL GATE BIAS EFFECTS IN RESISTIVE GATE NMOS TRANSISTORS
P Schieke, M du PlessisIn order to simulate resistive gate transistors, a one‐dimensional simulator, which permits the use of multiple gate contacts on the transistor structure, has been developed. In…
SIMULATION OF THE ELECTRICAL BEHAVIOUR OF GaAs MESFETS WITH DOPING AND LOW‐FIELD MOBILITY PROFILES IN THE ACTIVE LAYER
Frank SchwierzA quasi‐two‐dimensional analytical model for GaAs MESFETs is proposed. It enables the calculation of the dc, the small‐signal, and the noise behaviour of GaAs MESFETs and takes…
CHARACTERIZATION OF SUBMICROMETER GaAs MESFET USING DRIFT‐DIFFUSION SIMULATOR
Hamid Z. FardiAn empirical velocity‐field relationship, based on Monte Carlo simulation, is used to modify a drift‐diffusion model for the characterization of short gate GaAs MESFET's. The…
METHOD FOR ORDERING INTEGRATED CIRCUIT EQUATIONS IN SPECTRAL ANALYSIS OF THEIR TRANSIENT BEHAVIOR
O.A. Palusinski, M. AbdennadherThe transient simulation of integrated circuit has become very expensive in terms of computer time due to increase in the number of transistors in typical simulation. Spectral…
MODULE LEVEL PERFORMANCE SIMULATOR FOR ELECTRICAL AND OPTICAL INTERCONNECTS
L. Guan, C. Pusarla, G. Halkias, A. ChristouAs speed and complexity of electronic systems increase, the interconnect density has become the critical limitation to the performance of electrical systems. The performance of…
THE DEVELOPMENT OF THE RADIATION ENHANCED DIFFUSION MODEL OF BORON IN SILICON
G.V. Gadiyak, D.E. BlaghininThe radiation enhanced diffusion of implanted boron was modeled by considering the kinetic reaction between point defects, dislocations and boron atoms. The diffusion model…
NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON
G.V. Gadiyak, J.L. Korobitsina, V.I. KramarenkoThe model of the thermal oxidation of polycrystalline silicon is described. It includes parabolic equation system for the diffusion process of oxidant in polycrystalline oxide…
A THEORETICAL STUDY OF SURFACE KINETIC PROCESSES IN THE MBE GROWTH OF GaAs (100)
R. Venkatasubramanian, Shridhar BendiInterfacial roughness in heterostructures critically degrade the optical and electrical properties of the devices fabricated with III‐V semiconductor compounds. Experimental work…
NON‐EQUILIBRIUM MULTI‐VALLEY ELECTRON DISTRIBUTION FUNCTIONS IN GaAs
Ming‐C. Cheng, Rambabu ChennupatiThe concept of the evolution of the distribution function is used to derive an energy‐scale distribution that is able to describe transport phenomena, including inter‐valley…
BOUNDSTATES OF TWO‐ELECTRON SYSTEMS IN QUANTUM CONFINED GEOMETRIES
T. Singh, C. Engle, M. CahayWith the advent of sophisticated growth techniques such as Molecular Beam Epitaxy and Metal Organic Chemical Vapor Deposition, the calculation of the energy boundstates and…
THE USE OF REALISTIC BANDSTRUCTURE IN IMPACT IONISATION CALCULATIONS FOR WIDE BANDGAP SEMICONDUCTORS: APPLICATION TO INP AND GaAS
S.P. Wilson, S. Brand, A.R. Beattie, R.A. AbramA non‐local pseudopotential model is used to generate realistic bandstructure for InP and GaAs. This is used to calculate the thresholds for impact ionisation and ionisation rates…
AN EFFICIENT SOLUTION OF THE MULTI‐BAND BOLTZMANN TRANSPORT EQUATION IN SILICON
Yu‐Jen Wu, Neil GoldsmanA computationally very efficient solution of the multi‐band homogeneous Boltzmann transport equation (MB‐HBTE) for Silicon is presented. We used a Legendre polynomial (LP…
DYNA — A HYDRODYNAMIC SIMULATOR FOR TWO‐VALLEY SEMICONDUCTOR DEVICES
Yaxi Zhang, M. El NokaliA hydrodynamic semiconductor device simulator, DYNA, is introduced. A new relaxation time evaluation scheme for two‐valley semiconductors is proposed to account for the dependence…
VOLTAGE CONTROLLED JOSEPHSON JUNCTION ARRAYS
G. Qian, M. Cahay, D.B. Mast, H.C. LeeVarious experimental groups have reported observation of both integer and fractional giant Shapiro steps in the I‐V curves of N×M arrays of superconducting‐normal…
SIMULATION OF FIELD EMISSION FROM SILICON: SELF‐CONSISTENT CORRECTIONS USING THE WIGNER DISTRIBUTION FUNCTION
K.L. Jensen, A.K. GangulyIn this work we outline the methodology by which the Wigner Distribution Function (WDF) may be applied to the simulation of field emission from silicon into the vacuum so that the…
EVANESCENT MODES AND SCATTERING EFFECTS ON RESONANT TUNNELING IN ZERO DIMENSIONAL NANOSTRUCTURES: A SCATTERING MATRIX APPROACH
Chomsik Lee, Mark H. WeicholdTheoretical calculations of tunneling characteristics of the Gated Resonant Tunneling Diode (GRTD) aie obtained in low dimensionality using a scattering transfer matrix approach…
SIMULATION OF DEFECT ASSISTED TUNNELING AND ITS EFFECT ON I‐V CHARACTERISTICS IN RESONANT TUNNELING DIODES
Sangyong Lee, Mark H. Weichold, Donald L. Parker, Gregory F. SpencerThis paper presents a self‐consistent I‐V simulation technique for an RTD with defect wells placed inside the barriers. The motivation of this paper was to model the excess valley…
THE INFLUENCE OF LATTICE HEATING ON SEMICONDUCTOR DEVICE CHARACTERISTICS
Y. Apanovich, R. Cottle, B. Freydin, E. Lyumkis, B. Polsky, A. Tchernaiev, P. BlakeySelf‐consistent electrothermal simulation of modern semiconductor devices is required for the accurate and efficient design and optimization of many semiconductor devices. The…
A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION
Y. PanAs the physical dimensions of the devices are reduced to the submicrometer regime, the hot‐carrier reliability has become an important issue in the scaling of the p‐MOSFET as well…
ISSN:
0332-1649Online date, start – end:
1982Copyright Holder:
Emerald Publishing LimitedOpen Access:
hybridEditor:
- Prof Jan Sykulski