COMPEL - The international journal for computation and mathematics in electrical and electronic engineering: Volume 14 Issue 2/3

SUMMARY OF RESULTS FOR PROBLEM 20 (3‐D STATIC FORCE PROBLEM)

N. TAKAHASHI, T. NAKATA, H. MORISHIGE

Thirteen computer codes developed by eleven groups are applied to the benchmark problem 20 (3‐D static force problem) for the TEAM Workshop. The solutions are compared with each…

SUMMARY OF THE RESULTS FOR MAGNETIC DAMPING IN TORSIONAL MODE (TEAM PROBLEM 16)

TOSHIYUKI TAKAGI

This paper describes the results for magnetic damping in torsional mode (TEAM problem 16). A total of six solutions are presented and compared with experimental results. The…

SUMMARY OF RESULTS FOR TEAM WORKSHOP PROBLEM 13 (3‐D NONLINEAR MAGNETOSTATIC MODEL)

T. NAKATA, N. TAKAHASHI, K. FUJIWARA

Seven computer codes developed by five groups are applied to the benchmark problem 13 of the TEAM Workshop which consists of steel plates around a coil (a nonlinear magnetostatic…

Erratum

This article has been withdrawn as it was published elsewhere and accidentally duplicated. The original article can be seen here: 10.1108/eb010096. When citing the article, please…

DIELECTRIC SCATTERING FROM A CYLINDER EMBEDDED IN A LAYERED MEDIUM

A.G. PAPAGIANNAKIS, T.D. TSIBOUKIS, E.E. KRIEZIS

The dyadic Green's function for a horizontally stratified dielectric medium is computed. The general electric field integral equation describing the scattering from an arbitrary…

NUMERICAL COMPUTATION OF ELECTRONIC PROPERTIES OF SEMICONDUCTOR HETEROSTRUCTURES FOR QUANTUM DEVICE APPLICATIONS

M.E. LAZZOUNI, L.J. SHAM

We present a numerical self‐consistent method to solve for the electronic properties within a flexible and accurate theoretical model of selectively‐doped semiconductor…

‘A POSTERIORI’ ERROR INDICATOR AND ERROR ESTIMATORS FOR ADAPTIVE MESH REFINEMENT

K.C. CHELLAMUTHU, NATHAN IDA

Two different ‘a posteriori’ error estimation techniques are proposed in this paper. The effectiveness of the error estimates in adaptive mesh refinement for 2D and 3D…

AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS

N.R. ALURU, K.H. LAW, P.M. PINSKY, R.W. DUTTON

A mathematical analysis of the time‐dependent multi‐dimensional Hydrodynamic model is performed to determine the well‐posed boundary conditions for semiconductor device…

ANALYTICAL MODELS OF MAGNETIC SATURATION AND HYSTERESIS IN A NONLINEAR INDUCTANCE FOR APPLICATION IN SIMULATION STUDIES

JANUSZ S. LIPOWSKI

This paper presents new general mathematical models of normalized hysteresis curves, which define major‐hysteresis‐loop and minor‐hysteresis‐loop trajectories with several degrees…