Microelectronics International: Volume 38 Issue 3

Guest editorial

Hock Jin Quah, Sha Shiong Ng, Way Foong Lim, Zainuriah Hassan

Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique

Zulkifli Azman, Nafarizal Nayan, Megat Muhammad Ikhsan Megat Hasnan, Nurafiqah Othman, Anis Suhaili Bakri, Ahmad Shuhaimi Abu Bakar, Mohamad Hafiz Mamat, Mohd Zamri Mohd Yusop

This study aims to investigate the effect of temperature applied at the initial deposition of Aluminium Nitride (AlN) thin-film on a silicon substrate by high-power impulse…

N-face GaN substrate roughening for improved performance GaN-on-GaN LED

Ezzah Azimah Alias, Muhammad Esmed Alif Samsudin, Steven DenBaars, James Speck, Shuji Nakamura, Norzaini Zainal

This study aims to focus on roughening N-face (backside) GaN substrate prior to GaN-on-GaN light-emitting diode (LED) growth as an attempt to improve the LED performance.

Structural and mechanical properties of a-axis AlN thin films growth using reactive RF magnetron sputtering plasma

Anis Suhaili Bakri, Nafarizal Nayan, Chin Fhong Soon, Mohd Khairul Ahmad, Ahmad Shuhaimi Abu Bakar, Wan Haliza Abd Majid, Nur Amaliyana Raship

This paper aims to report the influence of sputtering plasma deposition time on the structural and mechanical properties of the a-axis oriented aluminium nitride (AlN) thin films.

The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

Ahmad Sauffi Yusof, Zainuriah Hassan, Sidi Ould Saad Hamady, Sha Shiong Ng, Mohd Anas Ahmad, Way Foong Lim, Muhd Azi Che Seliman, Christyves Chevallier, Nicolas Fressengeas

The purpose of this paper is to investigate the effect of growth temperature on the evolution of indium incorporation and the growth process of InGaN/GaN heterostructures.

Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED

Muhammad Esmed Alif Samsudin, Yusnizam Yusuf, Norzaini Zainal, Ahmad Shuhaimi Abu Bakar, Christian Zollner, Michael Iza, Steven P. DenBaars

The purpose of this study is to investigate the influence of AlN nucleation thickness in reducing the threading dislocations density in AlN layer grown on sapphire substrate.

Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

Mohd Ann Amirul Zulffiqal Md Sahar, Zainuriah Hassan, Sha Shiong Ng, Way Foong Lim, Khai Shenn Lau, Ezzah Azimah Alias, Mohd Anas Ahmad, Nur Atiqah Hamzah, Rahil Izzati Mohd Asri

The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum wells (QWs) on the structural, optical and electrical properties of…

Effects of three-step magnesium doping in p-GaN layer on the properties of InGaN-based light-emitting diode

Nur Atiqah Hamzah, Mohd Anas Ahmad, Rahil Izzati Mohd Asri, Ezzah Azimah Alias, Mohd Ann Amirul Zulffiqal Md Sahar, Ng Sha Shiong, Zainuriah Hassan

The purpose of this paper is to enhance the efficiency of the LED by introducing three-step magnesium (Mg) doping profile. Attention was paid to the effects of the Mg doping…